Innodisk ACT2GHR72N8H

ACT2GHR72N8H1333M, ACT2GHR72N8H1333M-LV, ACT2GHR72N8H1333S, ACT2GHR72N8H1333S-LV, ACT2GHR72N8H1600M, ACT2GHR72N8H1600M-LV, ACT2GHR72N8H1600S, ACT2GHR72N8H1600S-LV, ACT2GHR72N8H1866M, ACT2GHR72N8H1866M-LV, ACT2GHR72N8H1866S, ACT2GHR72N8H1866S-LV

DDR3

PRODUCT FEATURES

// DIMM (Dual In-line Memory Module)
// DDR3
// ECC
// 2 GB
// 256Mx8
// [1600 | 1866 | 1333] MT/s
// [1.35V | 1.50V]

CONFIGURATION

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Standard Configuration Custom Configuration

PRODUCT PRICE

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Sales only to business customers.
Delivery time: upon request

PRODUCT INFORMATION
CONFIGURATIONS

Basic Module: Innodisk ACT2GHR72N8H

General information
SKU / Item NumberACT2GHR72N8HACT2GHR72N8H1333M, ACT2GHR72N8H1600M, ACT2GHR72N8H1866M, ACT2GHR72N8H1333S, ACT2GHR72N8H1600S, ACT2GHR72N8H1866S, ACT2GHR72N8H1333M-LV, ACT2GHR72N8H1333S-LV, ACT2GHR72N8H1600M-LV, ACT2GHR72N8H1600S-LV, ACT2GHR72N8H1866M-LV, ACT2GHR72N8H1866S-LV
Product Basic Data
ManufacturerInnodisk
System
MemoryStructure240-pin DDR3 DIMM, 240-pin DDR3L DIMM
Memory TypeDDR3
DIMM TypeRegistered DIMM
Capacity2 GB
IC BrandMicron, Samsung
IC architecture256Mx8
GradeCommercial
CL9, 11, 13
DIMM data transfer rate1600 MT/s, 1866 MT/s, DDR3-1333 MT/s
ECC (Error-Correcting Code)is supported
Equipment/setupSingle Rank
Power Supply
Input voltage1.35V, 1.50V
Mechanical / Environment
TemperatureOperation0° to 85°C
Storage-50°C to 100°C
Relative humidityOperation10 to 90%, non-condensing
Storage5 to 95%, non-condensing
DimensionsForm factorDIMM (Dual In-line Memory Module)
Width133,35 mm
Certificates / Conformities
CEYes
RoHS compliantYes
Glühbirne

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