Innodisk ACT4GHR72N8J1333M View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1333M-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1333S View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1333S-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1333W View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Winbond |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1333W-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Winbond |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1600M View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1600 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1600M-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1600 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1600S View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1600 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1600S-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1600 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1600W View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1600 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Winbond |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1600W-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1600 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Winbond |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1866M View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1866 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1866M-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1866 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1866S View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1866 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1866S-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1866 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72N8J1866W View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1866 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Winbond |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72N8J1866W-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 512Mx8, 1866 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
512Mx8 |
|
|
Equipment/setup |
Single Rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Winbond |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72P8H1333M View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 256Mx8, 1333 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
256Mx8 |
|
|
Equipment/setup |
dual rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72P8H1333M-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 256Mx8, 1333 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
9 |
|
|
IC architecture |
256Mx8 |
|
|
Equipment/setup |
dual rank |
|
|
IC Data Rate |
DDR3-1333 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
DDR3-1333 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72P8H1600M View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 256Mx8, 1600 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
256Mx8 |
|
|
Equipment/setup |
dual rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72P8H1600M-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 256Mx8, 1600 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
11 |
|
|
IC architecture |
256Mx8 |
|
|
Equipment/setup |
dual rank |
|
|
IC Data Rate |
1600 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1600 MT/s |
| Power Supply |
Input voltage |
1.35V |
Innodisk ACT4GHR72P8H1866M View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 256Mx8, 1866 MT/s, 1.50V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
256Mx8 |
|
|
Equipment/setup |
dual rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.50V |
Innodisk ACT4GHR72P8H1866M-LV View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR3, ECC, 4 GB, 256Mx8, 1866 MT/s, 1.35V
|
| System |
Memory |
tREFI Parameter 1 |
Durchschnittliches periodisches Aktualisierungsintervall |
7.8 µS |
|
|
CL |
13 |
|
|
IC architecture |
256Mx8 |
|
|
Equipment/setup |
dual rank |
|
|
IC Data Rate |
1866 MHz |
|
|
IC Brand |
Micron |
|
|
DIMM data transfer rate |
1866 MT/s |
| Power Supply |
Input voltage |
1.35V |