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M4SS-8GS
SO-DIMM-DDR4-8GB
(SKUs: M4SS-8GS1NC0J-B, M4SS-8GS1NCRG-B, M4SS-8GSSOC0J-E, M4SS-8GSSOCRG-E)

Innodisk > Speicher, SSD, HDD > DRAM Module > Embedded > SODIMM > DDR4

Allgemein
SKU / ArtikelnummerDDR4-M4SS-8GSM4SS-8GS1NC0J-B, M4SS-8GS1NCRG-B, M4SS-8GSSOC0J-E, M4SS-8GSSOCRG-E
Produktgrunddaten
HerstellerInnodisk
System
SpeicherAufbau260 Pin SO-DIMM DDR4
Memory TypeDDR4
DIMM TypeUnbuffered SO-DIMM
IC Data Rate2400
Kapazität8 GB
IC BrandSamsung
IC Organization1Gx8, 512Mx8
PCB S/NN, O
GradeCommercial
DIMM Datarate2133, Original specification
CL15, 17
Die VersionB, E
ECCwird nicht unterstützt
Bestückung Dual-Rank, Single-Rank
tREFI Parameter 1Average Periodic Refresh Interval7.8 µS (4 GB), 7.8 µS (8 GB)
Temperaturbereich0°C~ 85°C
Stromversorgung
Eingangsspannung1.2V
Mechanik / Umgebung
TemperaturBetrieb0° bis 85°C
Lagerung-50° bis 100°C
Relative LuftfeuchtigkeitBetrieb10 bis 90%, nicht kondensierend
Lagerung5 bis 95%, nicht kondensierend
AbmaßeFormfaktorSO-DIMM
Länge70 mm
Höhe30 mm
Zertifikate / Konformitäten
CEJa
RoHS konformJa
Konfiguration noch nicht komplett.
 

System Speicher tREFI Parameter 1 Average Periodic Refresh Interval
CL
IC Organization
Bestückung
DIMM Datarate
Die Version
PCB S/N
4 Standardvarianten

Innodisk, M4SS-8GS1NC0J-B, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (8 GB)
CL 17
IC Organization 1Gx8
Bestückung Single-Rank
DIMM Datarate Original specification
Die Version B
PCB S/N N
Innodisk, M4SS-8GS1NCRG-B, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (8 GB)
CL 15
IC Organization 1Gx8
Bestückung Single-Rank
DIMM Datarate 2133
Die Version B
PCB S/N N

Innodisk M4SS-8GSSOC0J-E (EOL)

Innodisk, M4SS-8GSSOC0J-E, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 17
IC Organization 512Mx8
Bestückung Dual-Rank
DIMM Datarate Original specification
Die Version E
PCB S/N O

Innodisk M4SS-8GSSOCRG-E (EOL)

Innodisk, M4SS-8GSSOCRG-E, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 15
IC Organization 512Mx8
Bestückung Dual-Rank
DIMM Datarate 2133
Die Version E
PCB S/N O
Product Change Notification (PCN)
Product Change Notification
Due to supply condition, Innodisk hereby to announce the product change plan for all of DDR4 2400 Samsung 512x8 E die IC assembled modules. Innodisk is going to process DDR4 2400 Samsung 512x8 E die IC product termination and running change to DDR4 2666 Samsung 512x8 F die IC product series. Include below products: DDR4 2400/2133 512x8 4GB/8GB DRAM Modules.
Revision: 20022701
Revision date: February 27, 2020
Last purchase date: May 31, 2020
Last shipping date: August 31, 2020
Betroffene Produkte: DDR4-M4DS-4GSSIC0J-E, DDR4-M4MS-4GSS5C0J-E, DDR4-M4MS-4GSSXC0J-E, DDR4-M4SS-4GSS3C0J-E, DDR4-M4US-8GSSW50J-E, M4CS-4GSSL50J-E, M4CS-4GSSL5RG-E, M4CS-4GSSLC0J-E, M4CS-4GSSLCRG-E, M4CS-4GSSSC0J-E, M4CS-4GSSSCRG-E, M4CS-8GSSM50J-E, M4CS-8GSSM5RG-E, M4CS-8GSSMC0J-E, M4CS-8GSSMCRG-E, M4CS-8GSSTC0J-E, M4CS-8GSSTCRG-E, M4DS-4GSSP50J-E, M4DS-4GSSP5RG-E, M4DS-4GSSPC0J-E, M4DS-4GSSPCRG-E, M4DS-8GSSQ50J-E, M4DS-8GSSQ5RG-E, M4DS-8GSSQC0J-E, M4DS-8GSSQCRG-E, M4MS-8GSSYC0J-E, M4RS-4GSSA50J-E, M4RS-4GSSA5RG-E, M4RS-4GSSC50J-E, M4RS-4GSSC5RG-E, M4RS-4GSSCC0J-E, M4RS-4GSSCCRG-E, M4RS-8GSSB50J-E, M4RS-8GSSB5RG-E, M4RS-8GSSD50J-E, M4RS-8GSSD5RG-E, M4RS-8GSSDC0J-E, M4RS-8GSSDCRG-E, M4SS-4GSSN50J-E, M4SS-4GSSN5RG-E, M4SS-4GSSNC0J-E, M4SS-4GSSNCRG-E, M4SS-8GSSO50J-E, M4SS-8GSSO5RG-E, M4SS-8GSSOC0J-E, M4SS-8GSSOCRG-E, M4US-4GSSJ50J-E, M4US-4GSSJ5RG-E, M4US-4GSSJC0J-E, M4US-4GSSJCRG-E, M4US-4GSSVC0J-E, M4US-4GSSVCRG-E, M4US-8GSSK50J-E, M4US-8GSSK5RG-E, M4US-8GSSKC0J-E, M4US-8GSSKCRG-E, M4US-8GSSWC0J-E, M4US-8GSSWCRG-E
Hinweis Dokument: PCN 20022701-DDR4 2400 Samsung 512Mx8 E die IC Product Change Notice.pdf