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M4CE
Innodisk DIMM, DDR4 mit [4 GB | 8 GB], [1Gx8 | 512Mx8], [2133 | 2400 | 2666 | 2933 | 3200], 1.2V
(SKUs: M4CE-4GSSL50M-F, M4CE-4GSSL5UN-F, M4CE-4GSSLC0M-F, M4CE-4GSSLCUN-F, M4CE-4GSSLW0M-F, M4CE-4GSSLWUN-F, M4CE-8GM1LWIK-E, M4CE-8GM1LWRG-E, M4CE-8GM1LWSJ-E, M4CE-8GSSM50M-F, M4CE-8GSSM5UN-F, M4CE-8GSSMC0M-F, M4CE-8GSSMCUN-F, M4CE-8GSSMW0M-F, M4CE-8GSSMWUN-F)

Innodisk > Speicher, SSD, HDD > DRAM Module > Wide Temperature > LONG DIMM > DDR4

Allgemein
SKU / ArtikelnummerDDR4-M4CEM4CE-4GSSL50M-F, M4CE-4GSSL5UN-F, M4CE-4GSSLW0M-F, M4CE-4GSSLWUN-F, M4CE-8GM1LWIK-E, M4CE-8GM1LWRG-E, M4CE-8GM1LWSJ-E, M4CE-8GSSM50M-F, M4CE-8GSSM5UN-F, M4CE-8GSSMW0M-F, M4CE-8GSSMWUN-F, M4CE-4GM1LC0M-E, M4CE-4GM1LC0M-F, M4CE-4GM1LCIK-E, M4CE-4GM1LCIK-F, M4CE-4GM1LCRG-E, M4CE-4GM1LCRG-F, M4CE-4GM1LCSJ-E, M4CE-4GM1LCSJ-F, M4CE-4GM1LCUN-E, M4CE-4GM1LCUN-F, M4CE-4GM1MC0M-E, M4CE-4GM1MC0M-F, M4CE-4GM1MCIK-E, M4CE-4GM1MCIK-F, M4CE-4GM1MCRG-E, M4CE-4GM1MCRG-F, M4CE-4GM1MCSJ-E, M4CE-4GM1MCSJ-F, M4CE-4GM1MCUN-E, M4CE-4GM1MCUN-F, M4CE-4GMSLC0M-E, M4CE-4GMSLC0M-F, M4CE-4GMSLCIK-E, M4CE-4GMSLCIK-F, M4CE-4GMSLCRG-E, M4CE-4GMSLCRG-F, M4CE-4GMSLCSJ-E, M4CE-4GMSLCSJ-F, M4CE-4GMSLCUN-E, M4CE-4GMSLCUN-F, M4CE-4GMSMC0M-E, M4CE-4GMSMC0M-F, M4CE-4GMSMCIK-E, M4CE-4GMSMCIK-F, M4CE-4GMSMCRG-E, M4CE-4GMSMCRG-F, M4CE-4GMSMCSJ-E, M4CE-4GMSMCSJ-F, M4CE-4GMSMCUN-E, M4CE-4GMSMCUN-F, M4CE-4GS1LC0M-E, M4CE-4GS1LC0M-F, M4CE-4GS1LCIK-E, M4CE-4GS1LCIK-F, M4CE-4GS1LCRG-E, M4CE-4GS1LCRG-F, M4CE-4GS1LCSJ-E, M4CE-4GS1LCSJ-F, M4CE-4GS1LCUN-E, M4CE-4GS1LCUN-F, M4CE-4GS1MC0M-E, M4CE-4GS1MC0M-F, M4CE-4GS1MCIK-E, M4CE-4GS1MCIK-F, M4CE-4GS1MCRG-E, M4CE-4GS1MCRG-F, M4CE-4GS1MCSJ-E, M4CE-4GS1MCSJ-F, M4CE-4GS1MCUN-E, M4CE-4GS1MCUN-F, M4CE-4GSSLC0M-E, M4CE-4GSSLC0M-F, M4CE-4GSSLCIK-E, M4CE-4GSSLCIK-F, M4CE-4GSSLCRG-E, M4CE-4GSSLCRG-F, M4CE-4GSSLCSJ-E, M4CE-4GSSLCSJ-F, M4CE-4GSSLCUN-E, M4CE-4GSSLCUN-F, M4CE-4GSSMC0M-E, M4CE-4GSSMC0M-F, M4CE-4GSSMCIK-E, M4CE-4GSSMCIK-F, M4CE-4GSSMCRG-E, M4CE-4GSSMCRG-F, M4CE-4GSSMCSJ-E, M4CE-4GSSMCSJ-F, M4CE-4GSSMCUN-E, M4CE-4GSSMCUN-F, M4CE-8GM1LC0M-E, M4CE-8GM1LC0M-F, M4CE-8GM1LCIK-E, M4CE-8GM1LCIK-F, M4CE-8GM1LCRG-E, M4CE-8GM1LCRG-F, M4CE-8GM1LCSJ-E, M4CE-8GM1LCSJ-F, M4CE-8GM1LCUN-E, M4CE-8GM1LCUN-F, M4CE-8GM1MC0M-E, M4CE-8GM1MC0M-F, M4CE-8GM1MCIK-E, M4CE-8GM1MCIK-F, M4CE-8GM1MCRG-E, M4CE-8GM1MCRG-F, M4CE-8GM1MCSJ-E, M4CE-8GM1MCSJ-F, M4CE-8GM1MCUN-E, M4CE-8GM1MCUN-F, M4CE-8GMSLC0M-E, M4CE-8GMSLC0M-F, M4CE-8GMSLCIK-E, M4CE-8GMSLCIK-F, M4CE-8GMSLCRG-E, M4CE-8GMSLCRG-F, M4CE-8GMSLCSJ-E, M4CE-8GMSLCSJ-F, M4CE-8GMSLCUN-E, M4CE-8GMSLCUN-F, M4CE-8GMSMC0M-E, M4CE-8GMSMC0M-F, M4CE-8GMSMCIK-E, M4CE-8GMSMCIK-F, M4CE-8GMSMCRG-E, M4CE-8GMSMCRG-F, M4CE-8GMSMCSJ-E, M4CE-8GMSMCSJ-F, M4CE-8GMSMCUN-E, M4CE-8GMSMCUN-F, M4CE-8GS1LC0M-E, M4CE-8GS1LC0M-F, M4CE-8GS1LCIK-E, M4CE-8GS1LCIK-F, M4CE-8GS1LCRG-E, M4CE-8GS1LCRG-F, M4CE-8GS1LCSJ-E, M4CE-8GS1LCSJ-F, M4CE-8GS1LCUN-E, M4CE-8GS1LCUN-F, M4CE-8GS1MC0M-E, M4CE-8GS1MC0M-F, M4CE-8GS1MCIK-E, M4CE-8GS1MCIK-F, M4CE-8GS1MCRG-E, M4CE-8GS1MCRG-F, M4CE-8GS1MCSJ-E, M4CE-8GS1MCSJ-F, M4CE-8GS1MCUN-E, M4CE-8GS1MCUN-F, M4CE-8GSSLC0M-E, M4CE-8GSSLC0M-F, M4CE-8GSSLCIK-E, M4CE-8GSSLCIK-F, M4CE-8GSSLCRG-E, M4CE-8GSSLCRG-F, M4CE-8GSSLCSJ-E, M4CE-8GSSLCSJ-F, M4CE-8GSSLCUN-E, M4CE-8GSSLCUN-F, M4CE-8GSSMC0M-E, M4CE-8GSSMC0M-F, M4CE-8GSSMCIK-E, M4CE-8GSSMCIK-F, M4CE-8GSSMCRG-E, M4CE-8GSSMCRG-F, M4CE-8GSSMCSJ-E, M4CE-8GSSMCSJ-F, M4CE-8GSSMCUN-E, M4CE-8GSSMCUN-F
Produktgrunddaten
HerstellerInnodisk
System
SpeicherAufbau288 Pin DIMM DDR4
Memory TypeDDR4
DIMM TypeECC Unbuffered DIMM
IC Data Rate3200
Kapazität4 GB, 8 GB
IC BrandMicron, Samsung
IC Organization1Gx8, 512Mx8
PCB S/NL, M
GradeCommercial, Wide Temperature, Wide Temperature -40~+85°C
CL15, 17, 19, 21, 22
DIMM Datarate2133, 2400, 2666, 2933, 3200
Die VersionE, F
ECCwird unterstützt
tREFI Parameter 1Average Periodic Refresh Interval7.8 µS
Temperaturbereich85°C~95°C
tREFI Parameter 2Average Periodic Refresh Interval3.9 µS
Temperaturbereich85°C~95°C
Stromversorgung
Eingangsspannung1.2V
Mechanik / Umgebung
TemperaturBetrieb0° bis 85°C
Lagerung-50° bis 100°C
Relative LuftfeuchtigkeitBetrieb10 bis 90%, nicht kondensierend
Lagerung5 bis 95%, nicht kondensierend
AbmaßeFormfaktorDIMM
Breite133 mm
Höhe31 mm
Zertifikate / Konformitäten
CEJa
RoHS konformJa
Konfiguration noch nicht komplett.
 

System Speicher Kapazität
CL
IC Organization
IC Brand
Grade
DIMM Datarate
Die Version
PCB S/N
15 Standardvarianten

Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 3200, 1.2V
System Speicher Kapazität 4 GB
CL 22
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature -40~+85°C
DIMM Datarate 3200
Die Version F
PCB S/N L
Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.2V
System Speicher Kapazität 4 GB
CL 21
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature -40~+85°C
DIMM Datarate 2933
Die Version F
PCB S/N L
Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 3200, 1.2V
System Speicher Kapazität 4 GB
CL 22
IC Organization 512Mx8
IC Brand Samsung
Grade Commercial
DIMM Datarate 3200
Die Version F
PCB S/N L
Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.2V
System Speicher Kapazität 4 GB
CL 21
IC Organization 512Mx8
IC Brand Samsung
Grade Commercial
DIMM Datarate 2933
Die Version F
PCB S/N L
Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 3200, 1.2V
System Speicher Kapazität 4 GB
CL 22
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature
DIMM Datarate 3200
Die Version F
PCB S/N L
Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.2V
System Speicher Kapazität 4 GB
CL 21
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature
DIMM Datarate 2933
Die Version F
PCB S/N L
Innodisk DIMM, DDR4 mit 8 GB, 1Gx8, 2666, 1.2V
System Speicher Kapazität 8 GB
CL 19
IC Organization 1Gx8
IC Brand Micron
Grade Wide Temperature
DIMM Datarate 2666
Die Version E
PCB S/N L
Innodisk DIMM, DDR4 mit 8 GB, 1Gx8, 2133, 1.2V
System Speicher Kapazität 8 GB
CL 15
IC Organization 1Gx8
IC Brand Micron
Grade Wide Temperature
DIMM Datarate 2133
Die Version E
PCB S/N L
Innodisk DIMM, DDR4 mit 8 GB, 1Gx8, 2400, 1.2V
System Speicher Kapazität 8 GB
CL 17
IC Organization 1Gx8
IC Brand Micron
Grade Wide Temperature
DIMM Datarate 2400
Die Version E
PCB S/N L
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 3200, 1.2V
System Speicher Kapazität 8 GB
CL 22
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature -40~+85°C
DIMM Datarate 3200
Die Version F
PCB S/N M
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.2V
System Speicher Kapazität 8 GB
CL 21
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature -40~+85°C
DIMM Datarate 2933
Die Version F
PCB S/N M
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 3200, 1.2V
System Speicher Kapazität 8 GB
CL 22
IC Organization 512Mx8
IC Brand Samsung
Grade Commercial
DIMM Datarate 3200
Die Version F
PCB S/N M
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.2V
System Speicher Kapazität 8 GB
CL 21
IC Organization 512Mx8
IC Brand Samsung
Grade Commercial
DIMM Datarate 2933
Die Version F
PCB S/N M
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 3200, 1.2V
System Speicher Kapazität 8 GB
CL 22
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature
DIMM Datarate 3200
Die Version F
PCB S/N M
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.2V
System Speicher Kapazität 8 GB
CL 21
IC Organization 512Mx8
IC Brand Samsung
Grade Wide Temperature
DIMM Datarate 2933
Die Version F
PCB S/N M