M4RE
Innodisk DIMM, DDR4 mit [4 GB | 8 GB | 16 GB | 32 GB], [1Gx8 | 2Gx8 | 512Mx8], [2666 | 2933], 1.2V
(SKUs: M4RE-4GSSA50M-F, M4RE-4GSSA5UN-F, M4RE-8GS1A50M-C, M4RE-8GS1A5UN-C, M4RE-8GSSB50M-F, M4RE-8GSSB5UN-F, M4RE-AGS1B50M-C, M4RE-AGS1B5UN-C, M4RE-AGS1DC0M-C, M4RE-AGS1DCUN-C, M4RE-BGM2DC0M-E, M4RE-BGM2DCUN-E)
(SKUs: M4RE-4GSSA50M-F, M4RE-4GSSA5UN-F, M4RE-8GS1A50M-C, M4RE-8GS1A5UN-C, M4RE-8GSSB50M-F, M4RE-8GSSB5UN-F, M4RE-AGS1B50M-C, M4RE-AGS1B5UN-C, M4RE-AGS1DC0M-C, M4RE-AGS1DCUN-C, M4RE-BGM2DC0M-E, M4RE-BGM2DCUN-E)
Innodisk > Speicher, SSD, HDD > DRAM Module > Server > LONG DIMM VLP > DDR4
| Allgemein | ||||
| SKU / Artikelnummer | DDR4-M4RE | |||
| Produktgrunddaten | ||||
| Hersteller | Innodisk | |||
| System | ||||
| Speicher | Aufbau | 288 Pin DIMM DDR4 | ||
| Memory Type | DDR4 | |||
| DIMM Type | Registered DIMM | |||
| Kapazität | 4 GB, 8 GB, 16 GB, 32 GB | |||
| IC Brand | Micron, Samsung | |||
| IC Organization | 1Gx8, 2Gx8, 512Mx8 | |||
| PCB S/N | A, B, D | |||
| Grade | Commercial, Wide Temperature -40~+85°C | |||
| CL | 21, 22 | |||
| DIMM Datarate | 2666, 2933 | |||
| Die Version | C, E, F | |||
| Fixed Die | Ja | |||
| ECC | wird unterstützt | |||
| Bestückung | Dual-Rank | |||
| tREFI Parameter 1 | Average Periodic Refresh Interval | 3.9 µS | ||
| Temperaturbereich | 0°C~ 85°C | |||
| Stromversorgung | ||||
| Eingangsspannung | 1.2V | |||
| Mechanik / Umgebung | ||||
| Temperatur | Betrieb | 0° bis 85°C | ||
| Relative Luftfeuchtigkeit | Betrieb | 10 bis 90%, nicht kondensierend | ||
| Lagerung | 5 bis 95%, nicht kondensierend | |||
| Abmaße | Formfaktor | DIMM | ||
| Länge | 133 mm | |||
| Höhe | 19 mm | |||
| Zertifikate / Konformitäten | ||||
| CE | Ja | |||
| RoHS konform | Ja | |||
Konfiguration noch nicht komplett.
12 Standardvarianten
Innodisk M4RE-4GSSA50M-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2666, 1.2V
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| System | Speicher | Kapazität | 4 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2666 | |||
| Die Version | F | |||
| PCB S/N | A | |||
Innodisk M4RE-4GSSA5UN-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.2V
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| System | Speicher | Kapazität | 4 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| Die Version | F | |||
| PCB S/N | A | |||
Innodisk M4RE-8GS1A50M-C |
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Innodisk DIMM, DDR4 mit 8 GB, 1Gx8, 2666, 1.2V
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| System | Speicher | Kapazität | 8 GB | |
| CL | 22 | |||
| IC Organization | 1Gx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2666 | |||
| Die Version | C | |||
| PCB S/N | A | |||
Innodisk M4RE-8GS1A5UN-C |
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Innodisk DIMM, DDR4 mit 8 GB, 1Gx8, 2933, 1.2V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 21 | |||
| IC Organization | 1Gx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| Die Version | C | |||
| PCB S/N | A | |||
Innodisk M4RE-8GSSB50M-F |
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Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2666, 1.2V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2666 | |||
| Die Version | F | |||
| PCB S/N | B | |||
Innodisk M4RE-8GSSB5UN-F |
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Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.2V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| Die Version | F | |||
| PCB S/N | B | |||
Innodisk M4RE-AGS1B50M-C |
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Innodisk DIMM, DDR4 mit 16 GB, 1Gx8, 2666, 1.2V
|
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| System | Speicher | Kapazität | 16 GB | |
| CL | 22 | |||
| IC Organization | 1Gx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2666 | |||
| Die Version | C | |||
| PCB S/N | B | |||
Innodisk M4RE-AGS1B5UN-C |
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Innodisk DIMM, DDR4 mit 16 GB, 1Gx8, 2933, 1.2V
|
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| System | Speicher | Kapazität | 16 GB | |
| CL | 21 | |||
| IC Organization | 1Gx8 | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| Die Version | C | |||
| PCB S/N | B | |||
Innodisk M4RE-AGS1DC0M-C |
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Innodisk DIMM, DDR4 mit 16 GB, 1Gx8, 2666, 1.2V
|
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| System | Speicher | Kapazität | 16 GB | |
| CL | 22 | |||
| IC Organization | 1Gx8 | |||
| IC Brand | Samsung | |||
| Grade | Commercial | |||
| DIMM Datarate | 2666 | |||
| Die Version | C | |||
| PCB S/N | D | |||
Innodisk M4RE-AGS1DCUN-C |
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Innodisk DIMM, DDR4 mit 16 GB, 1Gx8, 2933, 1.2V
|
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| System | Speicher | Kapazität | 16 GB | |
| CL | 21 | |||
| IC Organization | 1Gx8 | |||
| IC Brand | Samsung | |||
| Grade | Commercial | |||
| DIMM Datarate | 2933 | |||
| Die Version | C | |||
| PCB S/N | D | |||
Innodisk M4RE-BGM2DC0M-E |
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Innodisk DIMM, DDR4 mit 32 GB, 2Gx8, 2666, 1.2V
|
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| System | Speicher | Kapazität | 32 GB | |
| CL | 22 | |||
| IC Organization | 2Gx8 | |||
| IC Brand | Micron | |||
| Grade | Commercial | |||
| DIMM Datarate | 2666 | |||
| Die Version | E | |||
| PCB S/N | D | |||
Innodisk M4RE-BGM2DCUN-E |
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Innodisk DIMM, DDR4 mit 32 GB, 2Gx8, 2933, 1.2V
|
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| System | Speicher | Kapazität | 32 GB | |
| CL | 21 | |||
| IC Organization | 2Gx8 | |||
| IC Brand | Micron | |||
| Grade | Commercial | |||
| DIMM Datarate | 2933 | |||
| Die Version | E | |||
| PCB S/N | D | |||