M4UE
Innodisk DIMM, DDR4 mit [4 GB | 8 GB], 512Mx8, [2933 | 3200], 1.50V
(SKUs: M4UE-4GSSJ50M-F, M4UE-4GSSJ5UN-F, M4UE-4GSSJC0M-F, M4UE-4GSSJCUN-F, M4UE-4GSSJI0M-F, M4UE-4GSSJIUN-F, M4UE-8GSSK50M-F, M4UE-8GSSK5UN-F, M4UE-8GSSKC0M-F, M4UE-8GSSKCUN-F, M4UE-8GSSKI0M-F, M4UE-8GSSKIUN-F)
(SKUs: M4UE-4GSSJ50M-F, M4UE-4GSSJ5UN-F, M4UE-4GSSJC0M-F, M4UE-4GSSJCUN-F, M4UE-4GSSJI0M-F, M4UE-4GSSJIUN-F, M4UE-8GSSK50M-F, M4UE-8GSSK5UN-F, M4UE-8GSSKC0M-F, M4UE-8GSSKCUN-F, M4UE-8GSSKI0M-F, M4UE-8GSSKIUN-F)
Innodisk > Speicher, SSD, HDD > DRAM Module > Embedded > LONG DIMM > DDR4
| Allgemein | ||||
| SKU / Artikelnummer | DDR4-M4UE | |||
| Produktgrunddaten | ||||
| Hersteller | Innodisk | |||
| System | ||||
| Speicher | Aufbau | 288 Pin DIMM DDR4 | ||
| Memory Type | DDR4 | |||
| DIMM Type | Registered DIMM | |||
| Kapazität | 4 GB, 8 GB | |||
| IC Brand | Samsung | |||
| IC Organization | 512Mx8 | |||
| PCB S/N | J, K | |||
| Grade | Commercial, Wide Temperature -40~+85°C | |||
| CL | 21, 22 | |||
| DIMM Datarate | 2933, 3200 | |||
| Die Version | F | |||
| ECC | wird nicht unterstützt | |||
| Bestückung | Dual-Rank, Single-Rank | |||
| tREFI Parameter 1 | Average Periodic Refresh Interval | 7.8 µS | ||
| Temperaturbereich | 0°C~ 85°C | |||
| Stromversorgung | ||||
| Eingangsspannung | 1.50V | |||
| Mechanik / Umgebung | ||||
| Temperatur | Lagerung | -55° bis 100°C | ||
| Relative Luftfeuchtigkeit | Betrieb | 10 bis 90%, nicht kondensierend | ||
| Lagerung | 5 bis 95%, nicht kondensierend | |||
| Abmaße | Formfaktor | DIMM | ||
| Breite | 134 mm | |||
| Höhe | 32 mm | |||
| Zertifikate / Konformitäten | ||||
| CE | Ja | |||
| RoHS konform | Ja | |||
Konfiguration noch nicht komplett.
12 Standardvarianten
Innodisk M4UE-4GSSJ50M-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 3200, 1.50V
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| System | Speicher | Kapazität | 4 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 3200 | |||
| PCB S/N | J | |||
Innodisk M4UE-4GSSJ5UN-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.50V
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| System | Speicher | Kapazität | 4 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| PCB S/N | J | |||
Innodisk M4UE-4GSSJC0M-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 3200, 1.50V
|
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| System | Speicher | Kapazität | 4 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial | |||
| DIMM Datarate | 3200 | |||
| PCB S/N | J | |||
Innodisk M4UE-4GSSJCUN-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.50V
|
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| System | Speicher | Kapazität | 4 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial | |||
| DIMM Datarate | 2933 | |||
| PCB S/N | J | |||
Innodisk M4UE-4GSSJI0M-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 3200, 1.50V
|
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| System | Speicher | Kapazität | 4 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 3200 | |||
| PCB S/N | J | |||
Innodisk M4UE-4GSSJIUN-F |
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Innodisk DIMM, DDR4 mit 4 GB, 512Mx8, 2933, 1.50V
|
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| System | Speicher | Kapazität | 4 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| PCB S/N | J | |||
Innodisk M4UE-8GSSK50M-F |
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Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 3200, 1.50V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 3200 | |||
| PCB S/N | K | |||
Innodisk M4UE-8GSSK5UN-F |
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Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.50V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| PCB S/N | K | |||
Innodisk M4UE-8GSSKC0M-F |
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Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 3200, 1.50V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial | |||
| DIMM Datarate | 3200 | |||
| PCB S/N | K | |||
Innodisk M4UE-8GSSKCUN-F |
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Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.50V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial | |||
| DIMM Datarate | 2933 | |||
| PCB S/N | K | |||
Innodisk M4UE-8GSSKI0M-F |
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|
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 3200, 1.50V
|
||||
| System | Speicher | Kapazität | 8 GB | |
| CL | 22 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 3200 | |||
| PCB S/N | K | |||
Innodisk M4UE-8GSSKIUN-F |
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|
Innodisk DIMM, DDR4 mit 8 GB, 512Mx8, 2933, 1.50V
|
||||
| System | Speicher | Kapazität | 8 GB | |
| CL | 21 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Wide Temperature -40~+85°C | |||
| DIMM Datarate | 2933 | |||
| PCB S/N | K | |||