M3D0-4G

SO-DIMM-DDR3/3L-4GB
(SKUs: M3D0-4GMS2CN9, M3D0-4GMS2CPC, M3D0-4GMS2CQE, M3D0-4GMS2LN9, M3D0-4GMS2LPC, M3D0-4GMS2LQE, M3D0-4GSJ6CM7, M3D0-4GSJ6CN9, M3D0-4GSJ6CPC, M3D0-4GSJ6LM7, M3D0-4GSJ6LN9, M3D0-4GSJ6LPC, M3D0-4GSS2CM7, M3D0-4GSS2CN9, M3D0-4GSS2CPC, M3D0-4GSS2CQE, M3D0-4GSS2LM7, M3D0-4GSS2LN9, M3D0-4GSS2LPC, M3D0-4GSS2LQE)

Innodisk > Speicher, SSD, HDD > DRAM Module > Embedded > SODIMM > DDR3

>> Allgemeine Produktanfrage (M3D0-4G) >> Online bestellen

Allgemein
	SKU / Artikelnummer			DDR3-M3D0-4G
Produktgrunddaten
	Hersteller			Innodisk
System
	Speicher	Aufbau		204 Pin SO-DIMM DDR3 / DDR3L
		Memory Type		DDR3
		DIMM Type		ECC Unbuffered SO DIMM
		IC Data Rate		Non-Fixed
		Kapazität		4 GB
		IC Brand		Micron, Samsung
		IC Organization		256Mx8, 512Mx8
		PCB S/N		2, 6
		Grade		Commercial, Low Voltage Commercial
		DIMM Datarate		1600, 1866, DDR3-1066, DDR3-1333
		CL		7, 9, 11, 13
		ECC		wird unterstützt
		Bestückung		Dual-Rank, Single-Rank
		tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB), 7.8 µS (4 GB)
			Temperaturbereich	0°C~ 85°C
Stromversorgung
	Eingangsspannung			1.35V, 1.50V
Mechanik / Umgebung
	Temperatur	Betrieb		0° bis 85°C
		Lagerung		-50° bis 100°C
	Relative Luftfeuchtigkeit	Betrieb		10 bis 90%, nicht kondensierend
		Lagerung		5 bis 95%, nicht kondensierend
	Abmaße	Formfaktor		SO-DIMM
		Länge		68 mm
		Höhe		30 mm
Zertifikate / Konformitäten
	CE			Ja
	RoHS konform			Ja

Konfiguration noch nicht komplett.

20 Standardvarianten

Innodisk M3D0-4GMS2CN9 >> Produktanfrage (M3D0-4GMS2CN9)>> Online bestellen
Innodisk, M3D0-4GMS2CN9, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		9
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Micron
		Grade		Commercial
		DIMM Datarate		DDR3-1333
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GMS2CPC >> Produktanfrage (M3D0-4GMS2CPC)>> Online bestellen
Innodisk, M3D0-4GMS2CPC, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		11
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Micron
		Grade		Commercial
		DIMM Datarate		1600
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GMS2CQE >> Produktanfrage (M3D0-4GMS2CQE)>> Online bestellen
Innodisk, M3D0-4GMS2CQE, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		13
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Micron
		Grade		Commercial
		DIMM Datarate		1866
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GMS2LN9 >> Produktanfrage (M3D0-4GMS2LN9)>> Online bestellen
Innodisk, M3D0-4GMS2LN9, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		9
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Micron
		Grade		Low Voltage Commercial
		DIMM Datarate		DDR3-1333
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GMS2LPC >> Produktanfrage (M3D0-4GMS2LPC)>> Online bestellen
Innodisk, M3D0-4GMS2LPC, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		11
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Micron
		Grade		Low Voltage Commercial
		DIMM Datarate		1600
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GMS2LQE >> Produktanfrage (M3D0-4GMS2LQE)>> Online bestellen
Innodisk, M3D0-4GMS2LQE, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		13
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Micron
		Grade		Low Voltage Commercial
		DIMM Datarate		1866
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSJ6CM7 >> Produktanfrage (M3D0-4GSJ6CM7)>> Online bestellen
Innodisk, M3D0-4GSJ6CM7, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB)
		CL		7
		IC Organization		256Mx8
		Bestückung		Dual-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		DDR3-1066
		PCB S/N		6
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSJ6CN9 >> Produktanfrage (M3D0-4GSJ6CN9)>> Online bestellen
Innodisk, M3D0-4GSJ6CN9, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB)
		CL		9
		IC Organization		256Mx8
		Bestückung		Dual-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		DDR3-1333
		PCB S/N		6
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSJ6CPC >> Produktanfrage (M3D0-4GSJ6CPC)>> Online bestellen
Innodisk, M3D0-4GSJ6CPC, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB)
		CL		11
		IC Organization		256Mx8
		Bestückung		Dual-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		1600
		PCB S/N		6
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSJ6LM7 >> Produktanfrage (M3D0-4GSJ6LM7)>> Online bestellen
Innodisk, M3D0-4GSJ6LM7, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB)
		CL		7
		IC Organization		256Mx8
		Bestückung		Dual-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		DDR3-1066
		PCB S/N		6
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSJ6LN9 >> Produktanfrage (M3D0-4GSJ6LN9)>> Online bestellen
Innodisk, M3D0-4GSJ6LN9, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB)
		CL		9
		IC Organization		256Mx8
		Bestückung		Dual-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		DDR3-1333
		PCB S/N		6
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSJ6LPC >> Produktanfrage (M3D0-4GSJ6LPC)>> Online bestellen
Innodisk, M3D0-4GSJ6LPC, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (2 GB)
		CL		11
		IC Organization		256Mx8
		Bestückung		Dual-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		1600
		PCB S/N		6
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSS2CM7 >> Produktanfrage (M3D0-4GSS2CM7)>> Online bestellen
Innodisk, M3D0-4GSS2CM7, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		7
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		DDR3-1066
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSS2CN9 >> Produktanfrage (M3D0-4GSS2CN9)>> Online bestellen
Innodisk, M3D0-4GSS2CN9, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		9
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		DDR3-1333
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSS2CPC >> Produktanfrage (M3D0-4GSS2CPC)>> Online bestellen
Innodisk, M3D0-4GSS2CPC, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		11
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		1600
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSS2CQE >> Produktanfrage (M3D0-4GSS2CQE)>> Online bestellen
Innodisk, M3D0-4GSS2CQE, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		13
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Commercial
		DIMM Datarate		1866
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.50V
Innodisk M3D0-4GSS2LM7 >> Produktanfrage (M3D0-4GSS2LM7)>> Online bestellen
Innodisk, M3D0-4GSS2LM7, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		7
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		DDR3-1066
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSS2LN9 >> Produktanfrage (M3D0-4GSS2LN9)>> Online bestellen
Innodisk, M3D0-4GSS2LN9, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		9
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		DDR3-1333
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSS2LPC >> Produktanfrage (M3D0-4GSS2LPC)>> Online bestellen
Innodisk, M3D0-4GSS2LPC, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		11
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		1600
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V
Innodisk M3D0-4GSS2LQE >> Produktanfrage (M3D0-4GSS2LQE)>> Online bestellen
Innodisk, M3D0-4GSS2LQE, -
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS (4 GB)
		CL		13
		IC Organization		512Mx8
		Bestückung		Single-Rank
		IC Brand		Samsung
		Grade		Low Voltage Commercial
		DIMM Datarate		1866
		PCB S/N		2
Stromversorgung	Eingangsspannung			1.35V

Innodisk M3D0-4GMS2CN9

Innodisk M3D0-4GMS2CPC

Innodisk M3D0-4GMS2CQE

Innodisk M3D0-4GMS2LN9

Innodisk M3D0-4GMS2LPC

Innodisk M3D0-4GMS2LQE

Innodisk M3D0-4GSJ6CM7

Innodisk M3D0-4GSJ6CN9

Innodisk M3D0-4GSJ6CPC

Innodisk M3D0-4GSJ6LM7

Innodisk M3D0-4GSJ6LN9

Innodisk M3D0-4GSJ6LPC

Innodisk M3D0-4GSS2CM7

Innodisk M3D0-4GSS2CN9

Innodisk M3D0-4GSS2CPC

Innodisk M3D0-4GSS2CQE

Innodisk M3D0-4GSS2LM7

Innodisk M3D0-4GSS2LN9

Innodisk M3D0-4GSS2LPC

Innodisk M3D0-4GSS2LQE

DataSheet