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M3D0-4G
SO-DIMM-DDR3/3L-4GB
(SKUs: M3D0-4GMS2CN9, M3D0-4GMS2CPC, M3D0-4GMS2CQE, M3D0-4GMS2LN9, M3D0-4GMS2LPC, M3D0-4GMS2LQE, M3D0-4GSJ6CM7, M3D0-4GSJ6CN9, M3D0-4GSJ6CPC, M3D0-4GSJ6LM7, M3D0-4GSJ6LN9, M3D0-4GSJ6LPC, M3D0-4GSS2CM7, M3D0-4GSS2CN9, M3D0-4GSS2CPC, M3D0-4GSS2CQE, M3D0-4GSS2LM7, M3D0-4GSS2LN9, M3D0-4GSS2LPC, M3D0-4GSS2LQE)

Innodisk > Speicher, SSD, HDD > DRAM Module > Embedded > SODIMM > DDR3

Allgemein
SKU / ArtikelnummerDDR3-M3D0-4GM3D0-4GSJ6CM7, M3D0-4GSJ6CN9, M3D0-4GSJ6CPC, M3D0-4GSJ6LM7, M3D0-4GSJ6LN9, M3D0-4GSJ6LPC, M3D0-4GSS2CM7, M3D0-4GSS2CN9, M3D0-4GSS2CPC, M3D0-4GSS2CQE, M3D0-4GSS2LM7, M3D0-4GSS2LN9, M3D0-4GSS2LPC, M3D0-4GSS2LQE, M3D0-4GMS2CN9, M3D0-4GMS2CPC, M3D0-4GMS2CQE, M3D0-4GMS2LN9, M3D0-4GMS2LPC, M3D0-4GMS2LQE
Produktgrunddaten
HerstellerInnodisk
System
SpeicherAufbau204 Pin SO-DIMM DDR3 / DDR3L
Memory TypeDDR3
DIMM TypeECC Unbuffered SO DIMM
IC Data RateNon-Fixed
Kapazität4 GB
IC BrandMicron, Samsung
IC Organization256Mx8, 512Mx8
PCB S/N2, 6
GradeCommercial, Low Voltage Commercial
DIMM Datarate1600, 1866, DDR3-1066, DDR3-1333
CL7, 9, 11, 13
ECCwird unterstützt
Bestückung Dual-Rank, Single-Rank
tREFI Parameter 1Average Periodic Refresh Interval7.8 µS (2 GB), 7.8 µS (4 GB)
Temperaturbereich0°C~ 85°C
Stromversorgung
Eingangsspannung1.35V, 1.50V
Mechanik / Umgebung
TemperaturBetrieb0° bis 85°C
Lagerung-50° bis 100°C
Relative LuftfeuchtigkeitBetrieb10 bis 90%, nicht kondensierend
Lagerung5 bis 95%, nicht kondensierend
AbmaßeFormfaktorSO-DIMM
Länge68 mm
Höhe30 mm
Zertifikate / Konformitäten
CEJa
RoHS konformJa
Konfiguration noch nicht komplett.
 

System Speicher tREFI Parameter 1 Average Periodic Refresh Interval
CL
IC Organization
Bestückung
IC Brand
Grade
DIMM Datarate
PCB S/N
Stromversorgung Eingangsspannung
20 Standardvarianten

Innodisk, M3D0-4GMS2CN9, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 9
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Micron
Grade Commercial
DIMM Datarate DDR3-1333
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GMS2CPC, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 11
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Micron
Grade Commercial
DIMM Datarate 1600
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GMS2CQE, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 13
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Micron
Grade Commercial
DIMM Datarate 1866
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GMS2LN9, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 9
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Micron
Grade Low Voltage Commercial
DIMM Datarate DDR3-1333
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GMS2LPC, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 11
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Micron
Grade Low Voltage Commercial
DIMM Datarate 1600
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GMS2LQE, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 13
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Micron
Grade Low Voltage Commercial
DIMM Datarate 1866
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSJ6CM7, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (2 GB)
CL 7
IC Organization 256Mx8
Bestückung Dual-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate DDR3-1066
PCB S/N 6
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSJ6CN9, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (2 GB)
CL 9
IC Organization 256Mx8
Bestückung Dual-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate DDR3-1333
PCB S/N 6
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSJ6CPC, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (2 GB)
CL 11
IC Organization 256Mx8
Bestückung Dual-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate 1600
PCB S/N 6
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSJ6LM7, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (2 GB)
CL 7
IC Organization 256Mx8
Bestückung Dual-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate DDR3-1066
PCB S/N 6
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSJ6LN9, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (2 GB)
CL 9
IC Organization 256Mx8
Bestückung Dual-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate DDR3-1333
PCB S/N 6
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSJ6LPC, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (2 GB)
CL 11
IC Organization 256Mx8
Bestückung Dual-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate 1600
PCB S/N 6
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSS2CM7, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 7
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate DDR3-1066
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSS2CN9, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 9
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate DDR3-1333
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSS2CPC, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 11
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate 1600
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSS2CQE, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 13
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Commercial
DIMM Datarate 1866
PCB S/N 2
Stromversorgung Eingangsspannung 1.50V
Innodisk, M3D0-4GSS2LM7, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 7
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate DDR3-1066
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSS2LN9, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 9
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate DDR3-1333
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSS2LPC, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 11
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate 1600
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V
Innodisk, M3D0-4GSS2LQE, -
System Speicher tREFI Parameter 1 Average Periodic Refresh Interval 7.8 µS (4 GB)
CL 13
IC Organization 512Mx8
Bestückung Single-Rank
IC Brand Samsung
Grade Low Voltage Commercial
DIMM Datarate 1866
PCB S/N 2
Stromversorgung Eingangsspannung 1.35V