Innodisk M4RS
DIMM, DDR4 mit [4 GB | 8 GB | 16 GB], [1Gx8 | 512Mx8], [2133 | 2400], 1.2V
(SKUs: M4RS-4GSSCC0J-E, M4RS-4GSSCCRG-E, M4RS-8GS1CC0J-B, M4RS-8GS1CCRG-B, M4RS-8GSSDC0J-E, M4RS-8GSSDCRG-E, M4RS-AGS1DC0J-B, M4RS-AGS1DCRG-B)
(SKUs: M4RS-4GSSCC0J-E, M4RS-4GSSCCRG-E, M4RS-8GS1CC0J-B, M4RS-8GS1CCRG-B, M4RS-8GSSDC0J-E, M4RS-8GSSDCRG-E, M4RS-AGS1DC0J-B, M4RS-AGS1DCRG-B)
Innodisk > Speicher, SSD, HDD > DRAM Module > Server > LONG DIMM VLP > DDR4
| Allgemein | ||||
| SKU / Artikelnummer | DDR4-M4RS | |||
| Produktgrunddaten | ||||
| Hersteller | Innodisk | |||
| System | ||||
| Speicher | Aufbau | 288 Pin DIMM DDR4 | ||
| Memory Type | DDR4 | |||
| DIMM Type | Registered DIMM | |||
| IC Data Rate | 2400 | |||
| Kapazität | 4 GB, 8 GB, 16 GB | |||
| IC Brand | Samsung | |||
| IC Organization | 1Gx8, 512Mx8 | |||
| PCB S/N | C, D | |||
| Grade | Commercial 0° ~ 85°C | |||
| CL | 15, 17 | |||
| DIMM Datarate | 2133, 2400 | |||
| Die Version | -, B, E | |||
| ECC | wird unterstützt | |||
| Bestückung | Dual-Rank, Single-Rank | |||
| tREFI Parameter 1 | Average Periodic Refresh Interval | 7.8 µS | ||
| Temperaturbereich | 0°C ~ 85°C | |||
| Stromversorgung | ||||
| Eingangsspannung | 1.2V | |||
| Mechanik / Umgebung | ||||
| Temperatur | Betrieb | 0° bis 85°C | ||
| Lagerung | -50° bis 100°C | |||
| Relative Luftfeuchtigkeit | Betrieb | 10 bis 90%, nicht kondensierend | ||
| Lagerung | 5 bis 95%, nicht kondensierend | |||
| Abmaße | Formfaktor | DIMM | ||
| Länge | 133 mm | |||
| Höhe | 19 mm | |||
| Zertifikate / Konformitäten | ||||
| CE | Ja | |||
| RoHS konform | Ja | |||
Konfiguration noch nicht komplett.
8 Standardvarianten
Innodisk M4RS-4GSSCC0J-E (EOL) |
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DIMM, DDR4 mit 4 GB, 512Mx8, 2400, 1.2V
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| System | Speicher | Kapazität | 4 GB | |
| CL | 17 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2400 | |||
| Die Version | E | |||
| PCB S/N | C | |||
Innodisk M4RS-4GSSCCRG-E (EOL) |
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DIMM, DDR4 mit 4 GB, 512Mx8, 2133, 1.2V
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| System | Speicher | Kapazität | 4 GB | |
| CL | 15 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2133 | |||
| Die Version | E | |||
| PCB S/N | C | |||
Innodisk M4RS-8GS1CC0J-B |
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DIMM, DDR4 mit 8 GB, 1Gx8, 2400, 1.2V
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| System | Speicher | Kapazität | 8 GB | |
| CL | 17 | |||
| IC Organization | 1Gx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2400 | |||
| Die Version | B | |||
| PCB S/N | C | |||
Innodisk M4RS-8GS1CCRG-B |
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DIMM, DDR4 mit 8 GB, 1Gx8, 2133, 1.2V
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| System | Speicher | Kapazität | 8 GB | |
| CL | 15 | |||
| IC Organization | 1Gx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2133 | |||
| Die Version | B | |||
| PCB S/N | C | |||
Innodisk M4RS-8GSSDC0J-E (EOL) |
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DIMM, DDR4 mit 8 GB, 512Mx8, 2400, 1.2V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 17 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2400 | |||
| Die Version | E | |||
| PCB S/N | D | |||
Innodisk M4RS-8GSSDCRG-E (EOL) |
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DIMM, DDR4 mit 8 GB, 512Mx8, 2133, 1.2V
|
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| System | Speicher | Kapazität | 8 GB | |
| CL | 15 | |||
| IC Organization | 512Mx8 | |||
| Bestückung | Dual-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2133 | |||
| Die Version | E | |||
| PCB S/N | D | |||
Innodisk M4RS-AGS1DC0J-B |
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DIMM, DDR4 mit 16 GB, 1Gx8, 2400, 1.2V
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| System | Speicher | Kapazität | 16 GB | |
| CL | 17 | |||
| IC Organization | 1Gx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2400 | |||
| Die Version | B | |||
| PCB S/N | D | |||
Innodisk M4RS-AGS1DCRG-B |
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DIMM, DDR4 mit 16 GB, 1Gx8, 2133, 1.2V
|
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| System | Speicher | Kapazität | 16 GB | |
| CL | 15 | |||
| IC Organization | 1Gx8 | |||
| Bestückung | Single-Rank | |||
| IC Brand | Samsung | |||
| Grade | Commercial 0° ~ 85°C | |||
| DIMM Datarate | 2133 | |||
| Die Version | B | |||
| PCB S/N | D | |||