Innodisk M3CW-4GSJ3C0C-F (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 256Mx8, - MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
11 |
|
|
IC Organization |
256Mx8 |
|
|
Bestückung |
Dual-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
Original specification MT/s |
|
|
Die Version |
F |
|
|
PCB S/N |
3 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSJ3CM7-F (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 256Mx8, 1066 (DDR3) MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
7 |
|
|
IC Organization |
256Mx8 |
|
|
Bestückung |
Dual-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
1066 (DDR3) MT/s |
|
|
Die Version |
F |
|
|
PCB S/N |
3 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSJ3CN9-F (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 256Mx8, 1333 MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
9 |
|
|
IC Organization |
256Mx8 |
|
|
Bestückung |
Dual-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
1333 MT/s |
|
|
Die Version |
F |
|
|
PCB S/N |
3 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSJ3L0C-F (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 256Mx8, - MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
11 |
|
|
IC Organization |
256Mx8 |
|
|
Bestückung |
Dual-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
Original specification MT/s |
|
|
Die Version |
F |
|
|
PCB S/N |
3 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSJ3LM7-F (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 256Mx8, 1066 (DDR3) MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
7 |
|
|
IC Organization |
256Mx8 |
|
|
Bestückung |
Dual-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
1066 (DDR3) MT/s |
|
|
Die Version |
F |
|
|
PCB S/N |
3 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSJ3LN9-F (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 256Mx8, 1333 MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
9 |
|
|
IC Organization |
256Mx8 |
|
|
Bestückung |
Dual-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
1333 MT/s |
|
|
Die Version |
F |
|
|
PCB S/N |
3 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSS1C0C-D (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, - MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
11 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
Original specification MT/s |
|
|
Die Version |
D |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSS1C0C-E (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, - MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
11 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
Original specification MT/s |
|
|
Die Version |
E |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSS1CM7-D (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1066 (DDR3) MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
7 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
1066 (DDR3) MT/s |
|
|
Die Version |
D |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSS1CM7-E (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1066 (DDR3) MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
7 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
1066 (DDR3) MT/s |
|
|
Die Version |
E |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSS1CN9-D (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
9 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
1333 MT/s |
|
|
Die Version |
D |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSS1CN9-E (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.50V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
9 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Commercial |
|
|
DIMM Datarate |
1333 MT/s |
|
|
Die Version |
E |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.50V |
Innodisk M3CW-4GSS1L0C-D (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, - MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
11 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
Original specification MT/s |
|
|
Die Version |
D |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSS1L0C-E (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, - MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
11 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
Original specification MT/s |
|
|
Die Version |
E |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSS1LM7-D (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1066 (DDR3) MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
7 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
1066 (DDR3) MT/s |
|
|
Die Version |
D |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSS1LM7-E (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1066 (DDR3) MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
7 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
1066 (DDR3) MT/s |
|
|
Die Version |
E |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSS1LN9-D (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
9 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
1333 MT/s |
|
|
Die Version |
D |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.35V |
Innodisk M3CW-4GSS1LN9-E (EOL) Vollständiges Datenblatt anzeigen Datenblatt schliessen
|
DIMM, DDR3, ECC, 4 GB, 512Mx8, 1333 MT/s, 1.35V
|
System |
Speicher |
tREFI Parameter 1 |
Average Periodic Refresh Interval |
7.8 µS |
|
|
CL |
9 |
|
|
IC Organization |
512Mx8 |
|
|
Bestückung |
Single-Rank |
|
|
Grade |
Low Voltage Commercial |
|
|
DIMM Datarate |
1333 MT/s |
|
|
Die Version |
E |
|
|
PCB S/N |
1 |
Stromversorgung |
Eingangsspannung |
1.35V |